ZnO Octahedron Fabricated by Thermal Evaporation Technique in Air
نویسندگان
چکیده
منابع مشابه
Growth of catalyst-free high-quality ZnO nanowires by thermal evaporation under air ambient
ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hex...
متن کاملPhotoresponses of ZnO nanobridge devices fabricated using a single-step thermal evaporation method
We have recently reported fabrication of ZnO nanobridge devices using a single-step thermal evaporation method. In this fabrication process, e completely eliminated the need of either any metal catalysts or a ZnO seed layer to synthesize the ZnO nanobridges. As initially postulated, he morphology of an anisotropic crystalline substrate alone defines the growth region to prevent the random growt...
متن کاملAl-Doped ZnO Thin Film Transistors by Thermal Evaporation
In this paper, Al-doped ZnO thin film transistors (AZO-TFT) were fabricated by the thermal evaporation growth of AZO channel layer on a silicon substrate at temperatures below 250°C. A SiO2 dielectric layer grown by the horizontal furnace was used as a gate. An active layer thickness of 10nm was measured by Atomic Force Microscopy (AFM), and its surface had root mean square (rms) roughness 12.6...
متن کاملsuppression of coke formation in thermal cracking by coke inhibitors
the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...
15 صفحه اولSelective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation
By thermal evaporation of pure ZnO powders, high-density vertical-aligned ZnO nanorod arrays with diameter ranged in 80–250 nm were successfully synthesized on Si substrates covered with ZnO seed layers. It was revealed that the morphology, orientation, crystal, and optical quality of the ZnO nanorod arrays highly depend on the crystal quality of ZnO seed layers, which was confirmed by the char...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2013
ISSN: 1226-7945
DOI: 10.4313/jkem.2013.26.4.294